Elucidating the Conducting Mechanisms in a Flexible Piezoresistive Pressure Sensor Using Reduced Graphene Oxide Film in Silicone Elastomer

Golezar Gilanizadehdizaj; Debes Bhattacharyya; Jonathan Stringer; Kean Aw

doi:10.3390/s23052443

Sensors (Feb 2023)

Elucidating the Conducting Mechanisms in a Flexible Piezoresistive Pressure Sensor Using Reduced Graphene Oxide Film in Silicone Elastomer

Golezar Gilanizadehdizaj,
Debes Bhattacharyya,
Jonathan Stringer,
Kean Aw

Affiliations

Golezar Gilanizadehdizaj: Department of Mechanical and Mechatronics Engineering, The University of Auckland, Auckland 1010, New Zealand
Debes Bhattacharyya: Department of Mechanical and Mechatronics Engineering, The University of Auckland, Auckland 1010, New Zealand
Jonathan Stringer: Department of Mechanical and Mechatronics Engineering, The University of Auckland, Auckland 1010, New Zealand
Kean Aw: Department of Mechanical and Mechatronics Engineering, The University of Auckland, Auckland 1010, New Zealand

DOI: https://doi.org/10.3390/s23052443
Journal volume & issue: Vol. 23, no. 5
p. 2443

Abstract

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Sensors as a composite film made from reduced graphene oxide (rGO) structures filled with a silicone elastomer are soft and flexible, making them suitable for wearable applications. The sensors exhibit three distinct conducting regions, denoting different conducting mechanisms when pressure is applied. This article aims to elucidate the conduction mechanisms in these sensors made from this composite film. It was deduced that the conducting mechanisms are dominated by Schottky/thermionic emission and Ohmic conduction.

Published in Sensors

ISSN: 1424-8220 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Chemical technology
Website: http://www.mdpi.com/journal/sensors

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