Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing

Lei Wu; Hongxia Liu; Jinfu Lin; Shulong Wang

doi:10.3390/nano10030457

Nanomaterials (Mar 2020)

Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing

Lei Wu,
Hongxia Liu,
Jinfu Lin,
Shulong Wang

Affiliations

Lei Wu: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Hongxia Liu: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Jinfu Lin: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Shulong Wang: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

DOI: https://doi.org/10.3390/nano10030457
Journal volume & issue: Vol. 10, no. 3
p. 457

Abstract

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A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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