Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Liu Zhetong; Liu Bingyao; Chen Zhaolong; Yang Shenyuan; Liu Zhiqiang; Wei Tongbo; Gao Peng; Liu Zhongfan

doi:10.1360/nso/20220068

National Science Open (Jul 2023)

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Liu Zhetong,
Liu Bingyao,
Chen Zhaolong,
Yang Shenyuan,
Liu Zhiqiang,
Wei Tongbo,
Gao Peng,
Liu Zhongfan

Affiliations

Liu Zhetong: ["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Beijing Graphene Institute (BGI), Beijing 100095, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China"]
Liu Bingyao: ["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Beijing Graphene Institute (BGI), Beijing 100095, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China"]
Chen Zhaolong: ["Beijing Graphene Institute (BGI), Beijing 100095, China","Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China","Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore"]
Yang Shenyuan: ["State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"]
Liu Zhiqiang: ["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"]
Wei Tongbo: ["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"]
Gao Peng: ["Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China","Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China","Collaborative Innovation Center of Quantum Matter, Beijing 100871, China"]
Liu Zhongfan: ["Beijing Graphene Institute (BGI), Beijing 100095, China","Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China"]

DOI: https://doi.org/10.1360/nso/20220068
Journal volume & issue: Vol. 2

Abstract

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Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance. Two-dimensional (2D) material-assisted heteroepitaxy offers an effective solution to these challenges. The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics. Herein, we summarize the modes of 2D material-assisted epitaxy, which can be classified into remote epitaxy, pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates. Furthermore, we discuss in detail the improved crystal quality and functional applications, such as flexible devices, wavelength-modulated optoelectronic devices, and thermal management in high-power devices. Moreover, we highlight the challenges and prospects of 2D material-assisted epitaxy, providing roadmaps for lateral research and semiconductor production.

Published in National Science Open

ISSN: 2097-1168 (Print); 2097-1400 (Online)
Publisher: Science Press
Country of publisher: China
LCC subjects: Science; Technology: Engineering (General). Civil engineering (General)
Website: https://www.sciengine.com/NSO/home

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