Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Abstract

Highlights Atomically substitutional engineering in binary transition metal dichalcogenides (TMDs) enables the facile production of ternary or quaternary TMDs with tunable (opto)electronic properties spanning the entire compositional spectrum. A comprehensive overview is provided on multinary TMDs, including Janus-type structures, aiming to elaborate on their theoretical foundations, synthetic strategies, tailored properties, and superior applications. The challenges and opportunities faced in accelerating the exploitation of multinary TMDs as highly promising nanomaterials are discussed.

Keywords

• Transition metal dichalcogenides
• Atomic substitution
• Tailored structure
• Tunable bandgap
• Enhanced applications