Engineering and Technology Journal (Jun 2024)

Microwave dielectric properties of Zn1-xCuxWO4 (x= 0, 0.03)/Polymer Composites

  • Lamees Faeq,
  • saad Farid,
  • Fadhel Hashim

DOI
https://doi.org/10.30684/etj.2023.143514.1590
Journal volume & issue
Vol. 42, no. 6
pp. 677 – 686

Abstract

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The rapid growth in wireless telecommunication systems has spurred a strong interest in lightweight, compact, and cost-effective materials. One promising solution for achieving these characteristics is using polymer matrix ceramic-reinforced composites. In this context, complex oxide materials, specifically Zn1-xCuxWO4 (where x=0 and x=0.03), were used to reinforce three different polymer matrices: epoxy, polyurethane, and silicone rubber. The primary objective was to create composites with low loss factors and high dielectric constants, essential qualities for telecommunications systems. To create the complex oxides, the solid-state reaction method was employed. In particular, the X-ray diffraction (XRD) analysis confirmed that Zn0.97Cu0.03WO4 exhibited a monoclinic phase structure similar to that of ZnWO4. Moreover, the impact of substituting copper ions on the dielectric properties was thoroughly examined through Rietveld refinement of X-ray diffraction data. Subsequently, composite materials were prepared using a simple hand-mixing method with 5% and 10% volume fractions of Zn1-xCuxWO4 (x=0 and x=0.03) integrated into the three different polymer matrices. To this end, the study extensively analyzed how the filler content and its concentration influenced the dielectric properties of these composites. The dielectric properties were characterized within the C-band frequency range, specifically from 4 to 8 GHz, utilizing transmission/reflection measurements with a vector network analyzer (VNA). The results confirm the potential enhancement of Zn0.97Cu0.03WO4/polymer composites compared to ZnWO4/polymer composites. More precisely, 10% Vf. Zn0.97Cu0.03WO4/epoxy composite and 10% Vf Zn0.97Cu0.03WO4/polyurethane composite showed satisfactory properties with (ϵr= 1.36 x 102, tanδ= 4.72 x 10-1 at 7.1 GHz) and (ϵr= 1.18 x 102, tanδ= 4.72 x 10-1 at 7.1 GHz), respectively.

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