Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

Abstract

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (Vgs Vth). Sharp fluctuations happen when the temperature rises with a gate voltage of Vth Vgs VFB. The conductance steadily decreases with increasing temperature after increasing the gate bias to Vgs > VFB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.

Keywords

• wrap-gate transistor
• nanowire
• GaN
• surface/core
• carrier scattering