Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

K. A. Hunnestad; C. Hatzoglou; Z. M. Khalid; P. E. Vullum; Z. Yan; E. Bourret; A. T. J. van Helvoort; S. M. Selbach; D. Meier

doi:10.1038/s41467-022-32189-0

Nature Communications (Aug 2022)

Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

K. A. Hunnestad,
C. Hatzoglou,
Z. M. Khalid,
P. E. Vullum,
Z. Yan,
E. Bourret,
A. T. J. van Helvoort,
S. M. Selbach,
D. Meier

Affiliations

K. A. Hunnestad: Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology
C. Hatzoglou: Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology
Z. M. Khalid: Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology
P. E. Vullum: Department of Physics, NTNU Norwegian University of Science and Technology
Z. Yan: Department of Physics, ETH Zurich
E. Bourret: Materials Sciences Division, Lawrence Berkeley National Laboratory
A. T. J. van Helvoort: Department of Physics, NTNU Norwegian University of Science and Technology
S. M. Selbach: Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology
D. Meier: Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology

DOI: https://doi.org/10.1038/s41467-022-32189-0
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 7

Abstract

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Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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