Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser

Abstract

We present a mode−locked GaSb−based optically pumped semiconductor disk laser operating at 2 µm based on the self−mode−locked mechanism. Using the delay differential equation model, we discuss the influence of cavity length on the stability of self−mode−locking and design a Z−shaped long cavity for self−mode−locking. Employing an aperture and an F−P etalon in the cavity length of ~365 mm, we obtain stable self−mode−locking at a center wavelength of 2034.5 nm, with a pulse duration of 255.48 ps and average output power of 173 mW at a repetition rate of 404 MHz.

Keywords

• GaSb
• semiconductor disk laser
• mid−infrared
• self−mode−locked