Nanoscale Research Letters (Aug 2019)

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

  • Jiamang Che,
  • Hua Shao,
  • Jianquan Kou,
  • Kangkai Tian,
  • Chunshuang Chu,
  • Xu Hou,
  • Yonghui Zhang,
  • Qian Sun,
  • Zi-Hui Zhang

DOI
https://doi.org/10.1186/s11671-019-3078-8
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 16

Abstract

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Abstract In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supplier layer, a conduction band barrier can be generated in the n-type electron supplier layer, which enables the modulation of the lateral current distribution in the p-type hole supplier layer for DUV LEDs. Additionally, according to our studies, the Mg doping concentration, the thickness, the AlN composition for the p-AlGaN insertion layer and the NPN-AlGaN junction number are found to have a great influence on the current spreading effect. A properly designed NPN-AlGaN current spreading layer can improve the optical output power, external quantum efficiency (EQE), and the wall-plug efficiency (WPE) for DUV LEDs.

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