Strong frequency conversion in heterogeneously integrated GaAs resonators

Lin Chang; Andreas Boes; Paolo Pintus; Jon D. Peters; MJ Kennedy; Xiao-Wen Guo; Nicolas Volet; Su-Peng Yu; Scott B. Papp; John E. Bowers

doi:10.1063/1.5065533

APL Photonics (Mar 2019)

Strong frequency conversion in heterogeneously integrated GaAs resonators

Lin Chang,
Andreas Boes,
Paolo Pintus,
Jon D. Peters,
MJ Kennedy,
Xiao-Wen Guo,
Nicolas Volet,
Su-Peng Yu,
Scott B. Papp,
John E. Bowers

Affiliations

Lin Chang: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Andreas Boes: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Paolo Pintus: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Jon D. Peters: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
MJ Kennedy: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Xiao-Wen Guo: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Nicolas Volet: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Su-Peng Yu: Time and Frequency Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA
Scott B. Papp: Time and Frequency Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA
John E. Bowers: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

DOI: https://doi.org/10.1063/1.5065533
Journal volume & issue: Vol. 4, no. 3
pp. 036103 – 036103-6

Abstract

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In this contribution, we demonstrate the first integrated gallium arsenide (GaAs) ring resonator for second harmonic generation (SHG) on a GaAs-on-insulator platform. Such resonators exhibit high nonlinear optical coefficients, a strong optical confinement, and intrinsic quality factors exceeding 2.6 × 105, which makes them very attractive for nonlinear optical applications. The fabricated resonators exhibit a great potential for frequency conversion: when 61 μW of pump power at 2 μm wavelength is coupled into the cavity, the absolute internal conversion efficiency is 4%. We predict an external SHG efficiency beyond 1 000 000%/W based on the GaAs resonance devices. Such nonlinear resonant devices of GaAs and its aluminum GaAs alloy can be directly integrated with active components in nonlinear photonic integrated circuits (PICs). This work paves a way for ultra-high efficient and compact frequency conversion elements in PICs.

Published in APL Photonics

ISSN: 2378-0967 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: https://aplphotonics.aip.org

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