An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor <i>S</i>-Parameters Based on Prior Knowledge Neural Network

Abstract

In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. A dual-extreme learning machine (D-ELM) structure with an adaptive genetic algorithm (AGA) optimization process is used to simulate the fresh S-parameters of InP HBT devices and the degradation of S-parameters after accelerated aging, respectively. In addition to the reliability parametric inputs of the original aging problem, the S-parameter degradation trend obtained from the aging small-signal equivalent circuit is used as additional information to inject into the D-ELM structure. Good agreement was achieved between measured and predicted results of the degradation of S-parameters within a frequency range of 0.1 to 40 GHz.

Keywords

• degradation prediction
• <i>S</i>-parameters
• D-ELM structure
• aging small-signal equivalent circuit
• prior knowledge neural network