AIP Advances (Aug 2020)

Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

  • Ryota Suzuki,
  • Yuriko Tadano,
  • Masaaki Tanaka,
  • Shinobu Ohya

DOI
https://doi.org/10.1063/5.0002536
Journal volume & issue
Vol. 10, no. 8
pp. 085115 – 085115-5

Abstract

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We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibility between the Fe-based MTJ and SrTiO3.