Quantum transport in a single molecular transistor at finite temperature

Abstract

Abstract We study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron–electron and electron–phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron–phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.