Nature Communications (Feb 2018)
Minimising efficiency roll-off in high-brightness perovskite light-emitting diodes
- Wei Zou,
- Renzhi Li,
- Shuting Zhang,
- Yunlong Liu,
- Nana Wang,
- Yu Cao,
- Yanfeng Miao,
- Mengmeng Xu,
- Qiang Guo,
- Dawei Di,
- Li Zhang,
- Chang Yi,
- Feng Gao,
- Richard H. Friend,
- Jianpu Wang,
- Wei Huang
Affiliations
- Wei Zou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Renzhi Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Shuting Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Yunlong Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Yu Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Yanfeng Miao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Mengmeng Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Qiang Guo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Dawei Di
- Cavendish Laboratory, Cambridge University
- Li Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Chang Yi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Feng Gao
- Biomolecular and Organic Electronics, IFM, Linköping University
- Richard H. Friend
- Cavendish Laboratory, Cambridge University
- Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
- DOI
- https://doi.org/10.1038/s41467-018-03049-7
- Journal volume & issue
-
Vol. 9,
no. 1
pp. 1 – 7
Abstract
Large drop in efficiency at high brightness has been holding back the development of various light-emitting diodes including halide perovskite. Here Zou et al. achieve high quantum efficiency of 10% under a high current density of 500 mA cm−2 in perovskite-based diodes by reducing luminescence quenching.