FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES

Abstract

The results of study and development of silicon nanowires (SiNWs) formation by metal-assisted chemical etching (MACE) are introduced. Linear dependence of SiNWs length from etching time is established. Total and mirror reflectance spectra, Raman scattering spectra of SiNWs and photoluminescence (PL) spectra are studied. Si band broadening and shifting to short-wave region in Raman spectra with increasing of etching time are revealed.

Keywords

• silicon nanowires
• metal-assisted chemical etching
• immersion deposition
• raman scattering
• photoluminescence