Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Abstract

With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.

Keywords

• Extended gate
• Ion-sensitive field-effect transistors
• Negative capacitance
• Sub-60 mV/dec subthreshold swing
• Ferroelectric memory effect