Chip (Mar 2024)

Sensing with extended gate negative capacitance ferroelectric field-effect transistors

  • Honglei Xue,
  • Yue Peng,
  • Qiushi Jing,
  • Jiuren Zhou,
  • Genquan Han,
  • Wangyang Fu

Journal volume & issue
Vol. 3, no. 1
p. 100074

Abstract

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With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.

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