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Open Physics
(Feb 2013)
Distributions of electric parameters in MOS structures on 3C-SiC substrate
Piskorski Krzysztof,
Przewlocki Henryk,
Esteve Romain,
Bakowski Mietek
Affiliations
Piskorski Krzysztof
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668, Warsaw, Poland
Przewlocki Henryk
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668, Warsaw, Poland
Esteve Romain
ACREO AB, Electrum 236, SE-164 40, Kista, Sweden
Bakowski Mietek
ACREO AB, Electrum 236, SE-164 40, Kista, Sweden
DOI
https://doi.org/10.2478/s11534-012-0116-x
Journal volume & issue
Vol. 11, no. 2
pp. 231 – 238
Abstract
Read online
No abstracts available.
Keywords
silicon carbide
mos structure
barrier height
photoelectric measurements
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