Results in Physics (Jan 2014)

Fabrication of Tm-doped Ta2O5 thin films using a co-sputtering method

  • K. Miura,
  • T. Osawa,
  • Y. Yokota,
  • T. Suzuki,
  • O. Hanaizumi

DOI
https://doi.org/10.1016/j.rinp.2014.08.011
Journal volume & issue
Vol. 4, no. C
pp. 148 – 149

Abstract

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Thulium-doped tantalum-oxide (Ta2O5:Tm) thin films were prepared using a simple co-sputtering method. A remarkable photoluminescence peak having a wavelength of around 800 nm due to Tm3+ was observed from a film annealed at 900 °C for 20 min. The δ-Ta2O5 (hexagonal) phase of the Ta2O5:Tm sputtered film is very important for obtaining strong photoluminescence.

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