Study of CMOS Sensing System for Radon and Alpha Radiation

Abstract

This study focuses on a CMOS sensing system for Radon and alpha radiation, which is based on a semiconductor device that is integrated monolithically on a single chip with the Readout Circuitry, thus allowing fabrication of a low-power and low-cost sensing system. The new sensor is based on a new mosaic design of an array of Floating Gate non-volatile memory-like transistors, which are implemented in a standard CMOS technology, with a single polysilicon layer. The transistors are electrically combined in parallel and are operated at subthreshold, thus achieving very high sensitivity and reduced noise. The sensing system’s architecture and design is presented, along with key operation concepts, characterization, and analysis results. Alpha and radon exposure results are compared to commercial radon detectors. The new sensor, dubbed TODOS-Radon sensor, measures continuously, is battery operated and insensitive to humidity.

Keywords

• radon
• alpha radiation
• CMOS sensor
• silicon radiation detector
• ionizing radiation sensor
• floating gate transistor