International Journal of Photoenergy (Jan 2013)
Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors
Abstract
This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.