An impact of frequency on capacitances of partially-depleted SOI MOSFETs

Abstract

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed

Keywords

• SOI MOSFET
• small-signal models
• non-quasistatic analysis
• admittances