Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

C. H. Li; O.M.J. van ‘t Erve; S. Rajput; L. Li; B. T. Jonker

doi:10.1038/ncomms13518

Nature Communications (Nov 2016)

Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

C. H. Li,
O.M.J. van ‘t Erve,
S. Rajput,
L. Li,
B. T. Jonker

Affiliations

C. H. Li: Materials Science and Technology Division, Naval Research Laboratory
O.M.J. van ‘t Erve: Materials Science and Technology Division, Naval Research Laboratory
S. Rajput: Department of Physics, University of Wisconsin
L. Li: Department of Physics, University of Wisconsin
B. T. Jonker: Materials Science and Technology Division, Naval Research Laboratory

DOI: https://doi.org/10.1038/ncomms13518
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 8

Abstract

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Spin-polarized states arising from either Rashba splitting or topological effects are expected to produce current-induced spin polarization with different magnitude and sign. Here, Li et al. observe current-generated spin polarization in both Bi2Se3(111) and InAs (001) films, with opposite signs of the spin voltage.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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