Investigation of the optical and electrical properties of zinc oxide by terahertz time domain ellipsometry

Zixi Zhao; Verdad C. Agulto; Toshiyuki Iwamoto; Kosaku Kato; Kohei Yamanoi; Toshihiko Shimizu; Nobuhiko Sarukura; Takashi Fujii; Tsuguo Fukuda; Masashi Yoshimura; Makoto Nakajima

Optical Materials: X (Dec 2024)

Investigation of the optical and electrical properties of zinc oxide by terahertz time domain ellipsometry

Zixi Zhao,
Verdad C. Agulto,
Toshiyuki Iwamoto,
Kosaku Kato,
Kohei Yamanoi,
Toshihiko Shimizu,
Nobuhiko Sarukura,
Takashi Fujii,
Tsuguo Fukuda,
Masashi Yoshimura,
Makoto Nakajima

Affiliations

Zixi Zhao: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Verdad C. Agulto: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Toshiyuki Iwamoto: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan; Nippo Precision Co., Ltd., Nirasaki, Yamanashi, 407-0175, Japan
Kosaku Kato: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Kohei Yamanoi: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Toshihiko Shimizu: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Nobuhiko Sarukura: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Takashi Fujii: Nippo Precision Co., Ltd., Nirasaki, Yamanashi, 407-0175, Japan; Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577, Japan
Tsuguo Fukuda: Fukuda Crystal Laboratory Co., Ltd., Aoba, Sendai, 989-3204, Japan
Masashi Yoshimura: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan
Makoto Nakajima: Institute of Laser Engineering, Osaka University, Suita, Osaka, 565-0871, Japan; Corresponding author.

Journal volume & issue: Vol. 24
p. 100352

Abstract

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In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 1016 cm−3.

Published in Optical Materials: X

ISSN: 2590-1478 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: https://www.journals.elsevier.com/optical-materials-x

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