Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition

Shenglin Wang; Shuai Wang; Xiaoguang Yang; Zunren Lv; Hongyu Chai; Lei Meng; Tao Yang

Heliyon (Sep 2023)

Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition

Shenglin Wang,
Shuai Wang,
Xiaoguang Yang,
Zunren Lv,
Hongyu Chai,
Lei Meng,
Tao Yang

Affiliations

Shenglin Wang: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
Shuai Wang: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
Xiaoguang Yang: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China; Corresponding author. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zunren Lv: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
Hongyu Chai: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
Lei Meng: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
Tao Yang: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

Journal volume & issue: Vol. 9, no. 9
p. e20005

Abstract

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We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.5 G illumination is achieved, showing an improvement of 11.25% in efficiency relative to type-I InAs/InGaAs QDSC. This improvement can be attributed to a high fill factor (FF) of 72.37% compared to 63% of the latter because the type-II structure effectively suppresses carrier recombination losses in QDs. As Sb composition increases to 24%, the FF maintains at a high level of 72.67%, but the efficiency drops to 17% because the elevation of valence band (VB) in GaAsSb capping layer further enhances the hole confinement. And the confinement reduces external quantum efficiency (EQE) and short-circuit current density (Jsc). These results prove the potential of improving efficiency of QDSCs by type-II structure.

Published in Heliyon

ISSN: 2405-8440 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Science: Science (General); Social Sciences: Social sciences (General)
Website: https://www.cell.com/heliyon/home

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