APL Materials (Jun 2015)

Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

  • Mengchen Huang,
  • Giriraj Jnawali,
  • Jen-Feng Hsu,
  • Shonali Dhingra,
  • Hyungwoo Lee,
  • Sangwoo Ryu,
  • Feng Bi,
  • Fereshte Ghahari,
  • Jayakanth Ravichandran,
  • Lu Chen,
  • Philip Kim,
  • Chang-Beom Eom,
  • Brian D’Urso,
  • Patrick Irvin,
  • Jeremy Levy

DOI
https://doi.org/10.1063/1.4916098
Journal volume & issue
Vol. 3, no. 6
pp. 062502 – 062502-7

Abstract

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We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.