Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

Affiliations

Mingzhi Dai: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Weiliang Wang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Pengjun Wang: Institute of Circuits and Systems, Ningbo University
Muhammad Zahir Iqbal: GIK Institute of Engineering Sciences & Technology
Nasim Annabi: Department of Chemical Engineering, Northeastern University
Nasir Amin: Government College University Faisalabad

Abstract

An amendment to this paper has been published and can be accessed via a link at the top of the paper.