A review of PETT oscillation's characteristics, mechanism, and suppression methods in the IGBT device

Abstract

In practical application, there are many parallel insulated gate bipolar transistor (IGBT) chips and anti-parallel fast recovery diode (FRD) chips in the IGBT devices. Because of the interactions between parasitic inductance and chip capacitance, plasma extraction transit time (PETT) oscillation might raise during the operation of IGBT device. The PETT oscillation, whose frequency ranges from 1 MHz to 700 MHz, may induce interference on driver circuits, and then cause the device failure. Moreover, the electromagnetic disturbance will affect the secondary devices. Therefore, it should be seriously considered in the design of the packaging to suppress PETT oscillation. The mechanism of PETT oscillation is complex, and its electrical characteristics are sensitive to the chip's parameters, load current, and DC link voltage. Hence, PETT oscillation is an important problem to be solved in device packaging design. In this paper, the characteristics, mechanism, and suppression methods of PETT oscillation are summarized. Based on the systematic summary, various suppression methods are compared and analyzed. Furthermore, the future research issues are prospected.

Keywords

• PETT oscillation
• Generated mechanism
• Carrier process
• Electrical characteristics
• Suppression method