High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator

Kaijun Song; Yedi Zhou; Yuxuan Chen; Abdiqani Mohamed Iman; Shema Richard Patience; Yong Fan

doi:10.1109/ACCESS.2019.2926121

IEEE Access (Jan 2019)

High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator

Kaijun Song,
Yedi Zhou,
Yuxuan Chen,
Abdiqani Mohamed Iman,
Shema Richard Patience,
Yong Fan

Affiliations

Kaijun Song: ORCiD; EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yedi Zhou: ORCiD; EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yuxuan Chen: EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Abdiqani Mohamed Iman: EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Shema Richard Patience: EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yong Fan: EHF Key Laboratory of Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/ACCESS.2019.2926121
Journal volume & issue: Vol. 7
pp. 116676 – 116683

Abstract

Read online

Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

About the journal

Abstract

Keywords