Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Paixão José A.; Henriques Marta S.C.; Micale Carlotta; Lopes Elsa B.; Pereira Vanda M.; Gonçalves António P.

doi:10.1051/epjconf/202023301001

EPJ Web of Conferences (Jan 2020)

Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Paixão José A.,
Henriques Marta S.C.,
Micale Carlotta,
Lopes Elsa B.,
Pereira Vanda M.,
Gonçalves António P.

Affiliations

Paixão José A.: CFisUC, Department of Physics, University of Coimbra
Henriques Marta S.C.: CFisUC, Department of Physics, University of Coimbra
Micale Carlotta: C²TN, DECN, Instituto Superior Técnico, University of Lisbon
Lopes Elsa B.: C²TN, DECN, Instituto Superior Técnico, University of Lisbon
Pereira Vanda M.: Max-Planck Institute for Chemical Physics of Solids
Gonçalves António P.: C²TN, DECN, Instituto Superior Técnico, University of Lisbon

DOI: https://doi.org/10.1051/epjconf/202023301001
Journal volume & issue: Vol. 233
p. 01001

Abstract

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Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi2(SexTe1-x)3, 0 ≤ x ≤ 1 and BiSbTe3), are presented and discussed.

Published in EPJ Web of Conferences

ISSN: 2100-014X (Online)
Publisher: EDP Sciences
Country of publisher: France
LCC subjects: Science: Physics
Website: http://www.epj-conferences.org/

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