Chemical Physics Impact (Dec 2024)

Synthesis and characterization of Ni2+- Zr4+ doped Ba-Ca M-type hexaferrites using sol-gel auto-combustion method

  • Mandeep Bhadan,
  • Anshita Pangotra,
  • Parth,
  • Ashwani Kumar Sood,
  • Jahangeer Ahmed,
  • Saad M Alshehri,
  • Norah Alhokbany,
  • Varinder Kaur,
  • Parambir Singh Malhi,
  • Sachin Kumar Godara,
  • Rohit Jasrotia

Journal volume & issue
Vol. 9
p. 100742

Abstract

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This work aims to study the effect of Zr-Ni dopant on the structure and traits of M-type barium calcium hexaferrites (BaCaM). For the first time, Ba0.8Ca0.2ZrxNixFe12–2xO19 (0.0 ≤ x ≤ 1.0) samples are synthesized employing the SGACM (sol-gel auto-combustion method). The pure phase formation of BaCaM was established by XRD data Rietveld refinement. An augmentation in both the lattice parameters (‘a’ as well as ‘c’) owing to the higher ionic radii of dopant ions as compared to Fe3+ shows that Ni2+and Zr4+ions were successfully swapped with Fe3⁺. The ''c/a'' ratio lies between 3.93–3.96 disclosing that the synthesized materials possess an M-type hexagonal ferrite structure. The reduction in crystallite with an increase in doping level might be due to lattice strain generated by the larger size of Ni2+ and Zr4+ dopant ions. The presence of two bands in the wavenumber range of 400 to 880 cm-1 in FTIR spectra corresponds to the Fe–O stretching in octahedral and tetrahedral locations. The Raman peaks widen without any shifting of the peak with an increment in Ni2+-Zr4+ ions contents revealing that Ni2+-Zr4+ are incorporated into BaCaM without changing its crystal structure. According to the M-H plots Ms value enhance from 24.94 (x = 0.00) to 36.84 emu/g (x = 0.60) and beyond x = 0.60, Ms values drop with an increment in Ni2+-Zr4+substitution level. A broad coercivity range lies between 4858 Oe (x = 0.0) to 653 Oe (x = 1.0), decreasing monotonically with substitution in Ni2+-Zr4+. All the synthesized material exhibits a reduction in dielectric constant value as frequency increases. Ni-Zr-doped BaCaM materials could be a suitable candidate for magnetic recording media and microwave absorber applications.

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