Nature Communications (Oct 2016)
Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
- Yaojia Wang,
- Erfu Liu,
- Huimei Liu,
- Yiming Pan,
- Longqiang Zhang,
- Junwen Zeng,
- Yajun Fu,
- Miao Wang,
- Kang Xu,
- Zhong Huang,
- Zhenlin Wang,
- Hai-Zhou Lu,
- Dingyu Xing,
- Baigeng Wang,
- Xiangang Wan,
- Feng Miao
Affiliations
- Yaojia Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Erfu Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Huimei Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Yiming Pan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Longqiang Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Junwen Zeng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Yajun Fu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Miao Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Kang Xu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Zhong Huang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Zhenlin Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Hai-Zhou Lu
- Department of Physics, South University of Science and Technology of China
- Dingyu Xing
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Baigeng Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Xiangang Wan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- DOI
- https://doi.org/10.1038/ncomms13142
- Journal volume & issue
-
Vol. 7,
no. 1
pp. 1 – 6
Abstract
Controllable electric transport of topological particles in solid state systems hold the key towards novel electronic applications. Here, Wang et al. demonstrate gate-tunable negative longitudinal magnetoresistance in WTe2, featuring controllable transport of Type-II Weyl fermions.
