Enhanced photoresponse of graphene oxide functionalised SnSe films

Hao Yao; Siwei Luo; Georg S. Duesberg; Xiang Qi; Donglin Lu; Chao Yue; Jianxin Zhong

doi:10.1063/1.5031066

AIP Advances (Jul 2018)

Enhanced photoresponse of graphene oxide functionalised SnSe films

Hao Yao,
Siwei Luo,
Georg S. Duesberg,
Xiang Qi,
Donglin Lu,
Chao Yue,
Jianxin Zhong

Affiliations

Hao Yao: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China
Siwei Luo: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China
Georg S. Duesberg: Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
Xiang Qi: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China
Donglin Lu: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China
Chao Yue: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China
Jianxin Zhong: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China

DOI: https://doi.org/10.1063/1.5031066
Journal volume & issue: Vol. 8, no. 7
pp. 075123 – 075123-8

Abstract

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The successful synthesis of large-area SnSe films on SiO2/Si substrate through vapor transport is reported. Based on this we fabricated photodetectors that exhibited a fast response from ultraviolet (UV) to near infrared (NIR) wavelengths. By decorating the SnSe film with graphene oxide quantum dots (GO QDs) the photocurrent and photoresponse time were enhanced significantly over the whole spectrum. Our results indicate that GO functionalised SnSe is a promising material for broadband photodetection.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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