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Open Physics
(Sep 2008)
Effect of adsorbed Sn on Ge diffusivity on Si(111) surface
Dolbak Andrey,
Olshanetsky Boris
Affiliations
Dolbak Andrey
Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
Olshanetsky Boris
Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
DOI
https://doi.org/10.2478/s11534-008-0098-x
Journal volume & issue
Vol. 6, no. 3
pp. 634 – 637
Abstract
Read online
No abstracts available.
Keywords
68.35.bg
68.35.fx
68.43.jk
surface
silicon
germanium
tin
surface structure
surface diffusion
surfactant
low energy electron diffraction
auger electron spectroscopy
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