Fabrication of Hydrogen Boride Thin Film by Ion Exchange in MgB<sub>2</sub>

T. Hirabayashi; S. Yasuhara; S. Shoji; A. Yamaguchi; H. Abe; S. Ueda; H. Zhu; T. Kondo; M. Miyauchi

doi:10.3390/molecules26206212

Molecules (Oct 2021)

Fabrication of Hydrogen Boride Thin Film by Ion Exchange in MgB<sub>2</sub>

T. Hirabayashi,
S. Yasuhara,
S. Shoji,
A. Yamaguchi,
H. Abe,
S. Ueda,
H. Zhu,
T. Kondo,
M. Miyauchi

Affiliations

T. Hirabayashi: Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8552, Japan
S. Yasuhara: Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8552, Japan
S. Shoji: Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8552, Japan
A. Yamaguchi: Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8552, Japan
H. Abe: Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
S. Ueda: Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan
H. Zhu: Department of Mechanical Engineering, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
T. Kondo: Department of Materials Science and Tsukuba Research Center for Energy Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
M. Miyauchi: Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8552, Japan

DOI: https://doi.org/10.3390/molecules26206212
Journal volume & issue: Vol. 26, no. 20
p. 6212

Abstract

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In this study, hydrogen boride films are fabricated by ion-exchange treatment on magnesium diboride (MgB2) films under ambient temperature and pressure. We prepared oriented MgB2 films on strontium titanate (SrTiO3) substrates using pulsed laser deposition (PLD). Subsequently, these films were treated with ion exchangers in acetonitrile solution. TOF-SIMS analysis evidenced that hydrogen species were introduced into the MgB2 films by using two types of ion exchangers: proton exchange resin and formic acid. According to the HAXPES analysis, negatively charged boron species were preserved in the films after the ion-exchange treatment. In addition, the FT-IR analysis suggested that B-H bonds were formed in the MgB2 films following the ion-exchange treatment. The ion-exchange treatment using formic acid was more efficient compared to the resin treatment; with respect to the amount of hydrogen species introduced into the MgB2 films. These ion-exchanged films exhibited photoinduced hydrogen release as observed in a powder sample. Based on the present study, we expect to be able to control the morphology and hydrogen content of hydrogen boride thin films by optimising the ion-exchange treatment process, which will be useful for further studies and device applications.

Published in Molecules

ISSN: 1420-3049 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Organic chemistry
Website: http://www.mdpi.com/journal/molecules

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