Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

Abstract

The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed.

Keywords

• radiation effects
• floating gate cells
• numerical modeling