Blue‐Emitting Orthorhombic Boron Nitride Quantum Dots and Quantum‐Dot Light‐Emitting Diodes

Abstract

Quantum‐dot light‐emitting diodes (QLEDs) have been considered the next‐generation display. However, the toxicity of Cd or Pb in these quantum dots (QDs) and the low performance of blue QLEDs remain critical issues, which greatly limit their sustainable development. Herein, first blue‐emitting quantum‐dot light‐emitting diode based on orthorhombic BN QDs with high photoluminescence quantum yield (PLQY) of 31.3% and electroluminescence at 437 nm is reported. With optimal solvothermal parameters, high photoluminescence quantum yield (PLQY) of 31.3% can be realized in the as‐synthesized BN QDs. The turn‐on voltage, maximum luminance, and maximum current density of these novel QLEDs are 9 V, 6.55 Cd m−2, and 34.42 mA cm−2, respectively. This work demonstrates that BN QDs have great potential for blue QLEDs with advantages of being nontoxic, Earth abundant, and having low‐cost manufacturing.

Keywords

• boron nitride
• electroluminescence
• quantum dots
• quantum-dot light-emitting diodes