All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

Jianqiu Chen; Xiuqi Huang; Qunjie Li; Zhiqiang Fang; Honglong Ning; Ruiqiang Tao; Hongfu Liang; Yicong Zhou; Rihui Yao; Junbiao Peng

doi:10.3390/app9010083

Applied Sciences (Dec 2018)

All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

Jianqiu Chen,
Xiuqi Huang,
Qunjie Li,
Zhiqiang Fang,
Honglong Ning,
Ruiqiang Tao,
Hongfu Liang,
Yicong Zhou,
Rihui Yao,
Junbiao Peng

Affiliations

Jianqiu Chen: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Xiuqi Huang: Visionox Technology Inc., Gu’an New Industry Demonstration Zone, Langfang 065500, China
Qunjie Li: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zhiqiang Fang: State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
Honglong Ning: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Ruiqiang Tao: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Hongfu Liang: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Yicong Zhou: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Rihui Yao: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Junbiao Peng: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.3390/app9010083
Journal volume & issue: Vol. 9, no. 1
p. 83

Abstract

Read online

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

About the journal

Abstract

Keywords