A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Lian Hu; Ziqiang Yang; Yuan Fang; Qingfeng Li; Yixuan Miao; Xiaofeng Lu; Xuechun Sun; Yaxin Zhang

doi:10.3390/mi14101921

Micromachines (Oct 2023)

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Lian Hu,
Ziqiang Yang,
Yuan Fang,
Qingfeng Li,
Yixuan Miao,
Xiaofeng Lu,
Xuechun Sun,
Yaxin Zhang

Affiliations

Lian Hu: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Ziqiang Yang: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Yuan Fang: The 13th Research Institute, CETC, Shijiazhuang 050051, China
Qingfeng Li: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Yixuan Miao: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Xiaofeng Lu: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Xuechun Sun: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Yaxin Zhang: School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China

DOI: https://doi.org/10.3390/mi14101921
Journal volume & issue: Vol. 14, no. 10
p. 1921

Abstract

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This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is −19 dBm, and the 3 dB bandwidth reaches 60 GHz (110–170 GHz), which validates the effectiveness of the design.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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