Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Yanwei Li; Chun Zhao; Deliang Zhu; Peijiang Cao; Shun Han; Youming Lu; Ming Fang; Wenjun Liu; Wangying Xu

doi:10.3390/nano10050965

Nanomaterials (May 2020)

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Yanwei Li,
Chun Zhao,
Deliang Zhu,
Peijiang Cao,
Shun Han,
Youming Lu,
Ming Fang,
Wenjun Liu,
Wangying Xu

Affiliations

Yanwei Li: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Chun Zhao: Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
Deliang Zhu: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Peijiang Cao: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Shun Han: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Youming Lu: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Ming Fang: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Wenjun Liu: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Wangying Xu: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China

DOI: https://doi.org/10.3390/nano10050965
Journal volume & issue: Vol. 10, no. 5
p. 965

Abstract

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Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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