Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Yan Cheng; Zhaomeng Gao; Kun Hee Ye; Hyeon Woo Park; Yonghui Zheng; Yunzhe Zheng; Jianfeng Gao; Min Hyuk Park; Jung-Hae Choi; Kan-Hao Xue; Cheol Seong Hwang; Hangbing Lyu

doi:10.1038/s41467-022-28236-5

Nature Communications (Feb 2022)

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Yan Cheng,
Zhaomeng Gao,
Kun Hee Ye,
Hyeon Woo Park,
Yonghui Zheng,
Yunzhe Zheng,
Jianfeng Gao,
Min Hyuk Park,
Jung-Hae Choi,
Kan-Hao Xue,
Cheol Seong Hwang,
Hangbing Lyu

Affiliations

Yan Cheng: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Zhaomeng Gao: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
Kun Hee Ye: Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University
Hyeon Woo Park: Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University
Yonghui Zheng: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Yunzhe Zheng: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Jianfeng Gao: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
Min Hyuk Park: Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University
Jung-Hae Choi: Electronic Materials Research Center, Korea Institute of Science and Technology
Kan-Hao Xue: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology
Cheol Seong Hwang: Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University
Hangbing Lyu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

DOI: https://doi.org/10.1038/s41467-022-28236-5
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 8

Abstract

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HfO2-based ferroelectric films are attracting a great deal of attention. Here, the authors conclude that the performance degradation and the possible rejuvenation are ascribed to the reversible transition between polar and antipolar phases.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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