Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application

Abstract

This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application. Experimental data from an AlGaN/InGaN/GaN HEMT is used to validate the simulation results based on the Id-Vg curve and transconductance, demonstrating their close agreement. Subsequently, the study focuses on investigating the impact of varying device parameters namely Indium (In) proportion of InGaN, gate length, source to gate length (Lsg) and gate to drain length (Lgd), and InGaN layer thickness. Sequential analysis has been done for various device parameters as a function of frequency. The results indicate that the device exhibits optimal performance when configured with an Indium (In) proportion of 0.15, a gate length of 0.40mm, an InGaN layer thickness of 2 nm and Lsg and Lgd of 1.15 mm, and 1.15 mm respectively shows f t 15.36 GHz and fmax 37 GHz which is almost more than twice of the original calibrated device. These findings provide valuable insights for designing devices with enhanced performance.

Keywords

• electron devices - iii-v
• hemt
• gallium nitride
• semiconductors iii-v
• ingan