BAlGaN light‐emitting diode emitting at 350 nm

Abstract

Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering decay into the p‐region, likely attributable to boron's surfactant nature. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED at low currents. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys.

Keywords

• boron
• light‐emitting diodes
• MOCVD
• optoelectronic devices
• secondary ion mass spectroscopy