Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

Abstract

Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure.