Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

Abstract

AbstractWe report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.

Keywords

• GaAs quantum dots
• Hierarchical selfassembly
• Single dot spectroscopy
• Room temperature luminescence
• Photon correlation
• 42.50.Ar
• 78.55.Cr
• 78.67.Hc