Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Hang Xie; Xin Chen; Qi Zhang; Zhiqiang Mu; Xinhai Zhang; Binghai Yan; Yihong Wu

doi:10.1038/s41467-022-33345-2

Nature Communications (Sep 2022)

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Hang Xie,
Xin Chen,
Qi Zhang,
Zhiqiang Mu,
Xinhai Zhang,
Binghai Yan,
Yihong Wu

Affiliations

Hang Xie: Department of Electrical and Computer Engineering, National University of Singapore
Xin Chen: Department of Electrical and Computer Engineering, National University of Singapore
Qi Zhang: Department of Electrical and Computer Engineering, National University of Singapore
Zhiqiang Mu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xinhai Zhang: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Rd. 1088
Binghai Yan: Department of Condensed Matter Physics, Weizmann Institute of Science
Yihong Wu: Department of Electrical and Computer Engineering, National University of Singapore

DOI: https://doi.org/10.1038/s41467-022-33345-2
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 10

Abstract

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Under an applied current, chiral antiferromagnets, such as Mn3Sn, can produce a spin-polarized current. Here, by varying the thickness of a buffering layer, the authors show that this spin-polarized current can drive self-induced switching in polycrystalline Mn3Sn.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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