Erratum: “Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors” [AIP Advances 7, 035321 (2017)]

• Jiadong Yu,
• Zhibiao Hao,
• Linsen Li,
• Lai Wang,
• Yi Luo,
• Jian Wang,
• Changzheng Sun,
• Yanjun Han,
• Bing Xiong,
• Hongtao Li

Affiliations

Jiadong Yu

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Zhibiao Hao

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Linsen Li

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Lai Wang

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Yi Luo

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Jian Wang

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Changzheng Sun

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Yanjun Han

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Bing Xiong

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Hongtao Li

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China