Study on the properties of wafer-scale grown MoS2 deposited via thermally induced chemical vapor deposition with Mo(CO)6 and H2S precursors

Abstract

To realize profitable applications with 2D-materials the transition from research scale to microelectronic fabrication methods is needed. This means the use of equipment for larger substrates and assessment of the process flows. In this study we demonstrate an effective way to assess MoS _2 as semiconducting material, deposited with the lower priced precursors Mo(CO) _6 and H _2 S on 200 mm silicon wafers. We could show how the evolution of layer quality develops depending on temperature and interface pretreatment. It is not possible to achieve mono-layers of 0.6 nm with high quality due to seeding kinetics and mechanism. In contrast, layers with thicknesses above 3 nm have suitable electrical and optical qualities to proceed with the design of active devices on 200 mm wafers.

Keywords

• growth kinetics
• molybdenum disulfide
• Raman assessment
• GIWAXS
• XRD