Crystals (Jan 2023)

Effect of Bi<sup>3+</sup> Doping on the Electronic Structure and Thermoelectric Properties of (Sr<sub>0.889-x</sub>La<sub>0.111</sub>Bi<sub>x</sub>)TiO<sub>2.963</sub>: First-Principles Calculations

  • Lingyun Gong,
  • Ping Zhang,
  • Zhihao Lou,
  • Ziyao Wei,
  • Zhuozhao Wu,
  • Jie Xu,
  • Xuanjie Chen,
  • Weihang Xu,
  • Yiqi Wang,
  • Feng Gao

DOI
https://doi.org/10.3390/cryst13020178
Journal volume & issue
Vol. 13, no. 2
p. 178

Abstract

Read online

The electronic structure and thermoelectric properties of Bi3+-doped (Sr0.889-xLa0.111Bix)TiO2.963 were studied by the first principles method. Doping Bi3+ can increase the cell parameters, cell asymmetry and band gap. With increasing Bi3+ content, the asymmetry of DOS relative to the Fermi level increases, which results in an enhanced Seebeck coefficient, increasing carrier mobility and decreasing carrier concentration. An appropriate Bi3+-doping concentration (7.4–14.8%) can increase the lattice distortion and reduce the lattice thermal conductivity of the material. An appropriate Bi3+-doping concentration (7.4%) can effectively optimize the electrical transport performance and improve the thermoelectric properties of strontium titanate. The optimal Bi3+-doping concentration is 7.4%, and Sr0.815La0.111Bi0.074TiO2.963 obtains a maximum ZT of 0.48. This work shows the mechanism of Bi3+ doping in enhancing the thermoelectric properties of strontium titanate.

Keywords