Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics

Chun-lin Zhang; Fang-cong Wang; Yong Zhang; Hai-xia Li; Su Liu

doi:10.1155/2010/291931

International Journal of Photoenergy (Jan 2010)

Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics

Chun-lin Zhang,
Fang-cong Wang,
Yong Zhang,
Hai-xia Li,
Su Liu

Affiliations

Chun-lin Zhang: Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, China
Fang-cong Wang: Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, China
Yong Zhang: Editorial Board of Journal of Lanzhou University, Lanzhou 730000, China
Hai-xia Li: Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 73000, China
Su Liu: Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, China

DOI: https://doi.org/10.1155/2010/291931
Journal volume & issue: Vol. 2010

Abstract

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The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq3)/LiF/Al and ITO/Alq3/Al was fabricated to analyze the contribution of LiF in OLED. We used the 𝐶-𝑉 characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

Published in International Journal of Photoenergy

ISSN: 1110-662X (Print); 1687-529X (Online)
Publisher: Hindawi Limited
Country of publisher: United Kingdom
LCC subjects: Technology: Mechanical engineering and machinery: Renewable energy sources
Website: https://onlinelibrary.wiley.com/journal/3837

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