Honeycomb-Shaped Phononic Crystals on 42°Y-X LiTaO3/SiO2/Poly-Si/Si Substrate for Improved Performance and Miniaturization

Panliang Tang; Hongzhi Pan; Temesgen Bailie Workie; Jia Mi; Jingfu Bao; Ken-ya Hashimoto

doi:10.3390/mi15101256

Micromachines (Oct 2024)

Honeycomb-Shaped Phononic Crystals on 42°Y-X LiTaO3/SiO2/Poly-Si/Si Substrate for Improved Performance and Miniaturization

Panliang Tang,
Hongzhi Pan,
Temesgen Bailie Workie,
Jia Mi,
Jingfu Bao,
Ken-ya Hashimoto

Affiliations

Panliang Tang: School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Avenu, West Hi-Tech Zone, Chengdu 611731, China
Hongzhi Pan: CETC No. 26 Research Institute, 14#Huayuan Road, Nanping, Nanan District, Chongqing 400060, China
Temesgen Bailie Workie: School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Avenu, West Hi-Tech Zone, Chengdu 611731, China
Jia Mi: CETC No. 26 Research Institute, 14#Huayuan Road, Nanping, Nanan District, Chongqing 400060, China
Jingfu Bao: School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Avenu, West Hi-Tech Zone, Chengdu 611731, China
Ken-ya Hashimoto: School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Avenu, West Hi-Tech Zone, Chengdu 611731, China

DOI: https://doi.org/10.3390/mi15101256
Journal volume & issue: Vol. 15, no. 10
p. 1256

Abstract

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A SAW device with a multi-layered piezoelectric substrate has excellent performance due to its high Q value. A multi-layer piezoelectric substrate combined with phononic crystal structures capable of acoustic wave reflection with a very small array can achieve miniaturization and high performance. In this paper, a honeycomb-shaped phononic crystal structure based on 42°Y-X LT/SiO2/poly-Si/Si-layered substrate is proposed. The analysis of the bandgap distribution under various filling fractions was carried out using dispersion and transmission characteristics. In order to study the application of PnCs in SAW devices, one-port resonators with different reflectors were compared and analyzed. Based on the frequency response curves and Bode-Q value curves, it was found that when the HC-PnC structure is used as a reflector, it can not only improve the transmission loss of the resonator but also reduce the size of the device.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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